Details

1. TCO

Description: TCO (Transparent Conductive Oxide) material used as an electrode

Format: Text string

Default: None

Examples: ITO; FTO; IZO

2. Blocking/buffer layer

: Blocking layer(for n-i-p structure) or buffer layer(for p-i-n structure) between electrode and charge transfer layer, especially for electron transfer layer

2-1. Material

2-1-1. Material

Description: Material used for blocking layer or buffer layer

Format: Text string

Default: None

Examples: TiO2; BCP; LiF

2-1-2. Concentration

Description: Concentration of material used for blocking layer or buffer layer

Format: Number

Default: None

Examples:

2-1-3. Concentration Unit

Description: Unit of concentration of material used

Format: Text string

Default: None

Examples: mg/ml

2-1-4. Quantity (ml)

Description: Quantity of material used (unit : ml)

Format: Number

Default: None

Examples: 0.2; 0.5

2-2. Solvent : (multiple solvents possible)

2-2-1. Material

Description: Solvent used for blocking layer or buffer layer

Format: Text string

Default: None

Examples: DMF; DMSO

2-2-2. Volume (ml)

Description: Amount of solvent used (unit: ml)

Format: Number

Default: None

Examples: 0.2; 0.5

2-3. Spin coating

2-3-1. Type

Description: method of spin coating

Format: Text string

Default: None

Examples: drop&run; dynamic

2-3-2. RPM

Description: RPM value of spin coater

Format: Number

Default: None

Examples: 2000; 5000

2-3-3. Time(s)

Description: operating time (unit: sec) of spin coater

Format: Number

Default: None

Examples: 20; 50

2-4. Vacuum suction time(s)

Description: vacuum suction time (unit: sec) after spin coating

Format: Number

Default: None

Examples:

2-5. Annealing

2-5-1. Temperature(ºC)

Description: Annealing Temperature (unit: ºC) for the Blocking lay

Format: Number

Default: None

Examples: 180

2-5-2. Time(min)

Description: Annealing time (unit: min) for the Blocking lay

Format: Number

Default: None

Examples: 30; 50

2-6. Module : for blocking layer or buffer layer

2-6-1. Type

Description: Method to coat large-area solar cell module

Format: Text string

Default: None

Examples: Bar coating; Slot die

2-6-2. gap (µm)

Description: gap between the bar and the substrate

Format: Number

Default: None

Examples:

2-6-3. coating speed (mm/s)

Description: Moving speed of the bar during the coating

Format: Number

Default: None

Examples:

2-6-4. feeding amount (µl)

Description: Amount of the solution loaded for the coating

Format: Number

Default: None

Examples:

2-7. Thermal evaporation : for blocking layer or buffer layer

2-7-1. vacuum evaporation-thickness (nm)

Description: Thickness of the blocking thin film after thermal evaporation

Format: Number

Default: None

Examples: 35; 30

2-7-2. Evaporation rate (Å/s)

Description: (average) Evaporation rate (It can be calculated by dividing the thickness of a thin film by the duration time of the process.)

Format: Number

Default: None

Examples: 0.1; 0.3

2-7-3. Vacuum pressure (uTorr)

Description: Pressure in a processing chamber during thermal evaporation

Format: Number

Default: None

Examples: 1; 2; 0.97

3. Surface Treatment1

Description: surface treatment between Blocking layer and ETL (charge transfer layer)

Format: Text string

Default: None

Examples: air_exposure; UV-ozone; Plasma

4. ETL

4-1. Material : for ETL

4-1-1. Material

Description: Material used for ETL

Format: Text string

Default: None

Examples: C60; SnO2; PCBM; TiO2

4-1-2. Concentration

Description: Concentration of material used for ETL

Format: Number

Default: None

Examples: 3;5

4-1-3. Concentration Unit

Description: Unit of concentration of material used

Format: Text string

Default: None

Examples: mg/ml

4-1-4. Quantity (ml)

Description: Quantity of material used (unit: ml)

Format: Number

Default: None

Examples: 0.2; 0.5

4-2. Solvent : (multiple solvents possible) : for ETL

4-2-1. Material

Description: Solvent used for ETL

Format: Text string

Default: None

Examples: DMF; DMSO

4-2-2. Volume (ml)

Description: Amount of solvent used (unit: ml)

Format: Number

Default: None

Examples: 0.2; 0.5

4-3. Spin coating : for ETL

4-3-1. Type

Description: method of spin coating for ETL

Format: Text string

Default: None

Examples: drop&run; dynamic

4-3-2. RPM

Description: RPM value of spin coater

Format: Number

Default: None

Examples: 2000; 5000

4-3-3. Time(s)

Description: operating time (unit: sec) of spin coater

Format: Number

Default: None

Examples: 20; 50

4-4. Vacuum suction time(s) : for ETL

Description: vacuum suction time (unit: sec) after spin coating

Format: Number

Default: None

Examples:

4-5. Annealing : for ETL

4-5-1. Temperature (ºC)

Description: Annealing Temperature (unit: ºC)

Format: Number

Default: None

Examples: 180

4-5-2. Time(min)

Description: Annealing time (unit: min)

Format: Number

Default: None

Examples: 30; 50

4-6. ETL doping

4-6-1. Material

Description: material for ETL doping

Format: Text string

Default: None

Examples:

4-6-2. Volume (ul)

Description: Amount of material used (unit: ul) for ETL doping

Format: Number

Default: None

Examples:

4-7. Module : for ETL

4-7-1. Type

Description: Method to coat large-area solar cell module

Format: Text string

Default: None

Examples: Bar coating; Slot die

4-7-2. gap (µm)

Description: gap between the bar and the substrate

Format: Number

Default: None

Examples:

4-7-3. coating speed (mm/s)

Description: Moving speed of the bar during the coating

Format: Number

Default: None

Examples:

4-7-4. feeding amount (µl)

Description: Amount of the solution loaded for the coating

Format: Number

Default: None

Examples:

4-8. Thermal evaporation: for ETL

4-8-1. vacuum evaporation-thickness (nm)

Description: Thickness of the thin film after thermal evaporation

Format: Number

Default: None

Examples: 35; 30

4-8-2. Evaporation rate (Å/s)

Description: (average) Evaporation rate (It can be calculated by dividing the thickness of a thin film by the duration time of the process.)

Format: Number

Default: None

Examples: 0.1; 0.3

4-8-3. Vacuum pressure (uTorr)

Description: Pressure in a processing chamber during thermal evaporation

Format: Number

Default: None

Examples: 1; 2; 0.97

4-9. Chemical Bath Deposition: for ETL

4-9-1. Solution

Description: Solution used for Chemical Bath Deposition

Format: Text string

Default: None

Examples: SnCl22H2O; thioglycolic acid; DI water; HCl; Urea

4-9-2. Quantity (ml)

Description: Amount of solution used (unit: ml)

Format: Number

Default: None

Examples: 10

4-9-3. Bath annealing Temperature (ºC)

Description: Chemical Bath annealing Temperature (unit: ºC) for ETL

Format: Number

Default: None

Examples: 90

4-9-4. Bath annealing Time(hr)

Description: Chemical Bath annealing time (unit: hr) for ETL

Format: Number

Default: None

Examples: 30; 50

4-10. Sputtering : for ETL

4-10-1. Target material

Description: Sputtering target material for ETL

Format: Text string

Default: None

Examples: SnO2; TiO2

4-10-2. Base pressure (uTorr)

Description: Pressure of the sputtering chamber before the process

Format: Number

Default: None

Examples: 1

4-10-3. Working pressure (mTorr)

Description: Pressure of the sputtering chamber during the process

Format: Number

Default: None

Examples: 1

4-10-4. Ar/O2 ratio

Description: Ratio of Ar and O during the sputtering process

Format: Number

Default: None

Examples:

4-10-5. Deposition rate (Å/s)

Description: (average) Deposition rate (It can be calculated by dividing the thickness of a thin film by the duration time of the process.)

Format: Number

Default: None

Examples: 1

4-10-6. Deposition thickness (nm)

Description: Thickness of the solar cell film after sputtering process

Format: Number

Default: None

Examples:

4-10-7. RF power (W)

Description: RF power that allows the plasma to hit the target

Format: Number

Default: None

Examples: 10

4-10-8. DC power current (mA)

Description: DC current (unit: mA) that allows the plasma to hit the target

Format: Number

Default: None

Examples: 10

4-10-9. DC power voltage (V)

Description: DC voltage (unit: V) that allows the plasma to hit the target

Format: Number

Default: None

Examples: 1

5. ETL Treatment

5-1. Material : for ETL Treatment

5-1-1. Material

Description: Material used for ETL Treatment

Format: Text string

Default: None

Examples: KCl; MACl

5-1-2. Concentration

Description: Concentration of material used for ETL Treatment

Format: Number

Default: None

Examples:

5-1-3. Concentration Unit

Description: Unit of concentration of material used for ETL Treatment

Format: Text string

Default: None

Examples: mg/ml

5-1-4. Quantity (ml)

Description: Quantity of material used (unit: ml) for ETL Treatment

Format: Number

Default: None

Examples: 0.2; 0.5

5-2. Solvent : (multiple solvent blocks possible) : for ETL Treatment

5-2-1. Material

Description: Solvent used for ETL Treatment

Format: Text string

Default: None

Examples: DMF; DMSO

5-2-2. Volume (ml)

Description: Amount of solvent used (unit: ml) for ETL Treatment

Format: Number

Default: None

Examples: 0.2; 0.5

5-3. Spin coating : for ETL Treatment

5-3-1. Type

Description: method of spin coating for ETL Treatment

Format: Text string

Default: None

Examples: drop&run; dynamic

5-3-2. RPM

Description: RPM value of spin coater

Format: Number

Default: None

Examples: 2000; 5000

5-3-3. Time(s)

Description: operating time (unit: sec) of spin coater

Format: Number

Default: None

Examples: 20; 50

5-4. Vacuum suction time(s) : for ETL Treatment

Description: vacuum suction time (unit: sec) after spin coating

Format: Number

Default: None

Examples:

5-5. Annealing : for ETL Treatment

5-5-1. . Temperature (ºC)

Description: Annealing Temperature (unit:℃) for ETL Treatment

Format: Number

Default: None

Examples: 180

5-5-2. Time(min)

Description: Annealing time (unit: min) for ETL Treatment

Format: Number

Default: None

Examples: 30; 50

5-6. Module : for ETL Treatment

5-6-1. Type

Description: Method to coat large-area solar cell module

Format: Text string

Default: None

Examples: Bar coating; Slot die

5-6-2. gap (µm)

Description: gap between the bar and the substrate

Format: Number

Default: None

Examples:

5-6-3. coating speed (mm/s)

Description: Moving speed of the bar during the coating

Format: Number

Default: None

Examples:

5-6-4. feeding amount (µl)

Description: Amount of the solution loaded for the coating

Format: Number

Default: None

Examples:

5-7. Thermal evaporation : for ETL Treatment

5-7-1. vacuum evaporation-thickness (nm)

Description: Thickness of the thin film after thermal evaporation

Format: Number

Default: None

Examples: 35; 30

5-7-2. Evaporation rate (Å/s)

Description: (average) Evaporation rate (It can be calculated by dividing the thickness of a thin film by the duration time of the process.)

Format: Number

Default: None

Examples: 0.1; 0.3

5-7-3. Vacuum pressure (uTorr)

Description: Pressure in a processing chamber during thermal evaporation

Format: Number

Default: None

Examples: 1; 2; 0.97

6. Surface Treatment2

Description: surface treatment between ETL (charge transfer layer) and Perovskite

Format: Text string

Default: None

Examples: air_exposure; UV-ozone; Plasma

7. Perovskite

: multiple columns possible depending on the number of steps

7-1. Method

Description: method to build a perovskite layer (number of step)

Format: Text string

Default: None

Examples: 1-step; 2-step

7-2. Molarity

Description: Molarity (molar concentration) of perovskite solution (unit: mol/L, M)

Format: Number

Default: None

Examples: 1.5; 1.8;

7-3. A-site : multiple blocks possible

7-3-1. Material : for A site

Description: Material for A-site

Format: Text string

Default: None

Examples: FA; MA; Cs

7-3-2. Ratio (%)

Description: Ratio of materials that make up A-site (unit: %)

Format: Number

Default: The sum of the ratios of multiple blocks should add up to 100.

Examples: 95; 5

7-4. B-site : multiple blocks possible

7-4-1. Material : for B site

Description: Material for B-site

Format: Text string

Default: None

Examples: Pb; Sn

7-4-2. Ratio (%)

Description: Ratio of materials that make up B-site (unit: %)

Format: Number

Default: The sum of the ratios of multiple blocks should add up to 100

Examples: 99; 1

7-5. X-site : multiple blocks possible

7-5-1. Material : for X site

Description: Material for X-site

Format: Text string

Default: None

Examples: I; Br

7-5-2. Ratio (%)

Description: Ratio of materials that make up X-site (unit: %)

Format: Number

Default: The sum of the ratios of multiple blocks should add up to 100.

Examples: 95; 5

7-6. Solvent : for Perovskite (multiple blocks possible)

7-6-1. Material

Description: Solvent used for Perovskite

Format: Text string

Default: None

Examples: DMF; DMSO

7-6-2. Volume (ml)

Description: Amount of solvent used (unit: ml)

Format: Number

Default: None

Examples: 0.2; 0.5

7-7. Additive : for Perovskite (multiple blocks possible)

7-7-1. Material

Description: Material used for Additive of Perovskite

Format: Text string

Default: None

Examples: MACl

7-7-2. Solvent

Description: Solvent for Additive of Perovskite

Format: Text string

Default: None

Examples:

7-7-3. Concentration

Description: Concentration of Solvent for Additive of Perovskite

Format: Number

Default: None

Examples: 1

7-7-4. Concentration Unit

Description: Unit of concentration of Solvent for Additive of Perovskite

Format: Number

Format: Text string

Default: None

Examples: mg/ml

7-7-5. Quantity (mol%)

Description: Quantity of additive solvent used (unit: mol%)

Format: Number

Default: None

Examples: 20

7-8. Stirring Time (min)

Description: Stirring Time for dissolving solutes in solvents (unit: min)

Format: Number

Default: None

Examples: 120

7-9. Antisolvent : for Perovskite

7-9-1. Material

Description: Antisolvent used for Perovskite

Format: Text string

Default: None

Examples: CB

7-9-2. Quantity (µl)

Description: Amount of Antisolvent used (unit: µl)

Format: Number

Default: None

Examples: 300

7-9-3. Dripping time (s)

Description: Dripping time of Antisolvent (unit: sec)

Format: Number

Default: None

Examples: 20

7-10. Spin coating : for Perovskite

7-10-1. Type

Description: method of spin coating

Format: Text string

Default: None

Examples: drop&run; dynamic

7-10-2. RPM

Description: RPM value of spin coater

Format: Number

Default: None

Examples: 2000; 5000

7-10-3. Time(s)

Description: operating time (unit: sec) of spin coater

Format: Number

Default: None

Examples: 20; 50

7-11. Annealing : for Perovskite

7-11-1. Temperature (ºC)

Description: Annealing Temperature (unit : ºC)

Format: Number

Default: None

Examples: 100

7-11-3. Time(min)

Description: operating time (unit: min) of Annealing

Format: Number

Default: None

Examples: 60

7-12. Atmosphere

7-12-1. Type

Description: type of atmosphere (N2 or air) used during the deposition of a perovskite layer

Format: Text string

Default: None

Examples: N2

7-12-1. Temperature (ºC)

Description: Temperature during the deposition of a perovskite layer (unit: ºC)

Format: Number

Default: None

Examples: 18.6

7-12-3. Humidity (RH%)

Description: Humidity during the deposition of a perovskite layer (unit: RH%)

Format: Number

Default: None

Examples:

7-13. Assist : for Perovskite

7-13-1. Type

Description: A method of promoting perovskite crystallization by using a hot air gun to heat blow during spin coating process

Format: Text string

Default: None

Examples: hot air assist

7-13-2. Temperature (ºC)

Description: Temperature of hot air gun (unit: ºC)

Format: Number

Default: None

Examples: 200

7-13-3. Assist start time (s)

Description: Time of start the heat flow using hot air gun (unit: sec)

Format: Number

Default: None

Examples: 13

7-13-4. Total assist time (s)

Description: Total time of heat flow using hot air gun (unit: sec)

Format: Number

Default: None

Examples: 10

7-14. Module : for Perovskite

7-14-1. Type

Description: Method to coat large-area solar cell module

Format: Text string

Default: None

Examples: Bar coating; Slot die

7-14-2. gap (µm)

Description: gap between the bar and the substrate

Format: Number

Default: None

Examples:

7-14-3. coating speed (mm/s)

Description: Moving speed of the bar during the coating

Format: Number

Default: None

Examples:

7-14-4. feeding amount (µl)

Description: Amount of the solution loaded for the coating

Format: Number

Default: None

Examples:

7-15. Thermal evaporation : for Perovskite

7-15-1. vacuum evaporation-thickness (nm)

Description: Thickness of the thin film after thermal evaporation

Format: Number

Default: None

Examples: 35; 30

7-15-2. Evaporation rate (Å/s)

Description: (average) Evaporation rate (It can be calculated by dividing the thickness of a thin film by the duration time of the process.)

Format: Number

Default: None

Examples: 0.1; 0.3

7-15-3. Vacuum pressure (uTorr)

Description: Pressure in a processing chamber during thermal evaporation

Format: Number

Default: None

Examples: 1; 2; 0.97

8. Perovskite Treatment

8-1. Material : for Perovskite Treatment

8-1-1. Material

Description: Material used for Perovskite Treatment

Format: Text string

Default: None

Examples: PEAl, MACl

8-1-2. Concentration

Description: Concentration of material used for Perovskite Treatment

Format: Number

Default: None

Examples:3

8-1-3. Concentration Unit

Description: Unit of concentration of material used

Format: Text string

Default: None

Examples: mg/ml

8-1-4. Quantity (ml)

Description: Quantity of material used (unit: ml)

Format: Number

Default: None

Examples: 0.2

8-2. Solvent : for Perovskite Treatment (multiple blocks possible)

8-2-1. Material

Description: Solvent used for Perovskite Treatment

Format: Text string

Default: None

Examples: DMSO

8-2-2. Volume (ml)

Description: Amount of solvent used (unit: ml)

Format: Number

Default: None

Examples: 0.2; 0.5

8-3. Spin coating : for Perovskite Treatment

8-3-1. Type

Description: method of spin coating for Perovskite Treatment

Format: Text string

Default: None

Examples: drop&run; dynamic

8-3-2. RPM

Description: RPM value of spin coater

Format: Number

Default: None

Examples: 2000; 5000

8-3-3. Time(s)

Description: operating time (unit: sec) of spin coater

Format: Number

Default: None

Examples: 20; 50

8-4. Vacuum suction time(s) : for Perovskite Treatment

Description: vacuum suction time (unit: sec) after spin coating

Format: Number

Default: None

Examples:

8-5. Annealing : for Perovskite Treatment

8-5-1. Temperature (ºC)

Description: Annealing Temperature (unit:ºC) for Perovskite Treatment

Format: Number

Default: None

Examples:

8-5-2. Time(min)

Description: Annealing time (unit: min) for Perovskite Treatment

Format: Number

Default: None

Examples:

8-6. Module : for Perovskite Treatment

8-6-1. Type

Description: Method to coat large-area solar cell module

Format: Text string

Default: None

Examples: Bar coating; Slot die

8-6-2. gap (µm)

Description: gap between the bar and the substrate

Format: Number

Default: None

Examples:

8-6-3. coating speed (mm/s)

Description: Moving speed of the bar during the coating

Format: Number

Default: None

Examples:

8-6-4. feeding amount (µl)

Description: Amount of the solution loaded for the coating

Format: Number

Default: None

Examples:

8-7. Thermal evaporation : for Perovskite Treatment

8-7-1. vacuum evaporation-thickness (nm)

Description: Thickness of the thin film after thermal evaporation

Format: Number

Default: None

Examples: 35; 30

8-7-2. Evaporation rate (Å/s)

Description: (average) Evaporation rate (It can be calculated by dividing the thickness of a thin film by the duration time of the process.)

Format: Number

Default: None

Examples: 0.1; 0.3

8-7-3. Vacuum pressure (uTorr)

Description: Pressure in a processing chamber during thermal evaporation

Format: Number

Default: None

Examples: 1; 2; 0.97

9. HTL

9-1. Material : for HTL

9-1-1. Material

Description: Material used for HTL

Format: Text string

Default: None

Examples: PTAA; spiro-OMeTAD; me-4pacz

9-1-2. Concentration

Description: Concentration of material used for HTL

Format: Number

Default: None

Examples: 3;5

9-1-3. Concentration Unit

Description: Unit of concentration of material used for HTL

Format: Text string

Default: None

Examples: mg/ml

9-1-4. Quantity (ml)

Description: Quantity of material used (unit: ml) for HTL

Format: Number

Default: None

Examples: 0.2; 0.5

9-2. Solvent : multiple blocks possible : for HTL

9-2-1. Material

Description: Solvent used for HTL

Format: Text string

Default: None

Examples: DMF; DMSO

9-2-2. Volume (ml)

Description: Amount of solvent used (unit: ml)

Format: Number

Default: None

Examples: 0.2; 0.5

9-3. Spin coating : for HTL

9-3-1. Type

Description: method of spin coating for HTL

Format: Text string

Default: None

Examples: drop&run; dynamic

9-3-2. RPM

Description: RPM value of spin coater

Format: Number

Default: None

Examples: 2000; 5000

9-3-3. Time(s)

Description: operating time (unit: sec) of spin coater

Format: Number

Default: None

Examples: 20; 50

9-4. Vacuum suction time(s) : for HTL

Description: vacuum suction time (unit: sec) after spin coating

Format: Number

Default: None

Examples:

9-5. Annealing : for HTL

9-5-1. Temperature (ºC)

Description: Annealing Temperature (unit: ºC) for HTL

Format: Number

Default: None

Examples: 180

9-5-2. Time(min)

Description: Annealing time (unit: min) for HTL

Format: Number

Default: None

Examples: 30; 50

9-6. HTL doping

9-6-1. Material

Description: material for HTL doping

Format: Text string

Default: None

Examples:

9-6-2. Volume (ul)

Description: Amount of material used for HTL doping (unit: ul)

Format: Number

Default: None

Examples: tBP; Li-TFSI

9-7. Module : for HTL

9-7-1. Type

Description: Method to coat large-area solar cell module

Format: Text string

Default: None

Examples: Bar coating; Slot die

9-7-2. gap (µm)

Description: gap between the bar and the substrate

Format: Number

Default: None

Examples:

9-7-3. coating speed (mm/s)

Description: Moving speed of the bar during the coating

Format: Number

Default: None

Examples:

9-7-4. feeding amount (µl)

Description: Amount of the solution loaded for the coating

Format: Number

Default: None

Examples:

9-8. Thermal evaporation : for HTL

9-8-1. vacuum evaporation-thickness (nm)

Description: Thickness of the thin film after thermal evaporation

Format: Number

Default: None

Examples: 35; 30

9-8-2. Evaporation rate (Å/s)

Description: (average) Evaporation rate (It can be calculated by dividing the thickness of a thin film by the duration time of the process.)

Format: Number

Default: None

Examples: 0.1; 0.3

9-8-3. Vacuum pressure (uTorr)

Description: Pressure in a processing chamber during thermal evaporation

Format: Number

Default: None

Examples: 1; 2; 0.97

10. HTL Treatment

10-1. Material : for HTL Treatment

10-1-1. Material

Description: Material used for HTL Treatment

Format: Text string

Default: None

Examples: Li-TFSI; BCP

10-1-2. Concentration

Description: Concentration of material used for HTL Treatment

Format: Number

Default: None

Examples:

10-1-3. Concentration Unit

Description: Unit of concentration of material used

Format: Text string

Default: None

Examples: mg/ml

10-1-4. Quantity (ml)

Description: Quantity of material used (unit: ml)

Format: Number

Default: None

Examples: 0.2; 0.5

10-2. Solvent : multiple blocks possible: for HTL Treatment

10-2-1. Material

Description: Solvent used for HTL Treatment

Format: Text string

Default: None

Examples: DMF; DMSO

10-2-2. Volume (ml)

Description: Amount of solvent used (unit: ml) for HTL Treatment

Format: Number

Default: None

Examples: 0.2; 0.5

10-3. Spin coating : for HTL Treatment

10-3-1. Type

Description: method of spin coating for HTL Treatment

Format: Text string

Default: None

Examples: drop&run; dynamic

10-3-2. RPM

Description: RPM value of spin coater

Format: Number

Default: None

Examples: 2000; 5000

10-3-3. Time(s)

Description: operating time (unit: sec) of spin coater

Format: Number

Default: None

Examples: 20; 50

10-4. Vacuum suction time(s) : for HTL Treatment

Description: vacuum suction time (unit: sec) after spin coating

Format: Number

Default: None

Examples:

10-5. Annealing : for HTL Treatment

10-5-1. Temperature (ºC)

Description: Annealing Temperature (unit:℃) for HTL Treatment

Format: Number

Default: None

Examples: 180

10-5-2. Time(min)

Description: Annealing time (unit: min) for HTL Treatment

Format: Number

Default: None

Examples: 30; 50

10-6. Module : for HTL Treatment

10-6-1. Type

Description: Method to coat large-area solar cell module

Format: Text string

Default: None

Examples: Bar coating; Slot die

10-6-2. gap (µm)

Description: gap between the bar and the substrate

Format: Number

Default: None

Examples:

10-6-3. coating speed (mm/s)

Description: Moving speed of the bar during the coating

Format: Number

Default: None

Examples:

10-6-4. feeding amount (µl)

Description: Amount of the solution loaded for the coating

Format: Number

Default: None

Examples:

10-7. Thermal evaporation : for HTL Treatment

10-7-1. vacuum evaporation-thickness (nm)

Description: Thickness of the thin film after thermal evaporation

Format: Number

Default: None

Examples: 35; 30

10-7-2. Evaporation rate (Å/s)

Description: (average) Evaporation rate (It can be calculated by dividing the thickness of a thin film by the duration time of the process.)

Format: Number

Default: None

Examples: 0.1; 0.3

10-7-3. Vacuum pressure (uTorr)

Description: Pressure in a processing chamber during thermal evaporation

Format: Number

Default: None

Examples: 1; 2; 0.97

11. Anode metal

11-1. Anode Metal : Material for Anode

Description: Material’s name used for Anode

Format: Text string

Default: None

Examples: Ag; Au

12. Miscellaneous

12-1 Note

Description: notes for the sample

Format: Text string

Default: None

Examples

12-2. AR

Description: Anti-Reflection coating (off:0, on:1)

Format: Number

Default:0

Examples: 0; 1

12-3. Type

Description: solar cell type, such as unit_cell or module

Format: Text string

Default: None

Examples: unit_cell; module

12-4. Device Type

Description: device type, such as p-i-n or n-i-p

Format: Text string

Default: None

Examples: p-i-n; n-i-p

12-5. Temperature (ºC)

Description: Temperature of device fabrication environment (unit: ºC)

Format: Number

Default: None

Examples:

12-6. Humidity (%)

Description: Humidity of device fabrication environment (unit: %)

Format: Number

Default: None

Examples:

12-7. Cell Dimension (cm2)

Description: cell dimension (must be written if JV curve doesn’t have an information for cell dimension)

Format: Number

Default: None

Examples: 0.64