Details
1. TCO
Description: TCO (Transparent Conductive Oxide) material used as an electrode
Format: Text string
Default: None
Examples: ITO; FTO; IZO
2. Blocking/buffer layer
: Blocking layer(for n-i-p structure) or buffer layer(for p-i-n structure) between electrode and charge transfer layer, especially for electron transfer layer
2-1. Material
2-1-1. Material
Description: Material used for blocking layer or buffer layer
Format: Text string
Default: None
Examples: TiO2; BCP; LiF
2-1-2. Concentration
Description: Concentration of material used for blocking layer or buffer layer
Format: Number
Default: None
Examples:
2-1-3. Concentration Unit
Description: Unit of concentration of material used
Format: Text string
Default: None
Examples: mg/ml
2-1-4. Quantity (ml)
Description: Quantity of material used (unit : ml)
Format: Number
Default: None
Examples: 0.2; 0.5
2-2. Solvent : (multiple solvents possible)
2-2-1. Material
Description: Solvent used for blocking layer or buffer layer
Format: Text string
Default: None
Examples: DMF; DMSO
2-2-2. Volume (ml)
Description: Amount of solvent used (unit: ml)
Format: Number
Default: None
Examples: 0.2; 0.5
2-3. Spin coating
2-3-1. Type
Description: method of spin coating
Format: Text string
Default: None
Examples: drop&run; dynamic
2-3-2. RPM
Description: RPM value of spin coater
Format: Number
Default: None
Examples: 2000; 5000
2-3-3. Time(s)
Description: operating time (unit: sec) of spin coater
Format: Number
Default: None
Examples: 20; 50
2-4. Vacuum suction time(s)
Description: vacuum suction time (unit: sec) after spin coating
Format: Number
Default: None
Examples:
2-5. Annealing
2-5-1. Temperature(ºC)
Description: Annealing Temperature (unit: ºC) for the Blocking lay
Format: Number
Default: None
Examples: 180
2-5-2. Time(min)
Description: Annealing time (unit: min) for the Blocking lay
Format: Number
Default: None
Examples: 30; 50
2-6. Module : for blocking layer or buffer layer
2-6-1. Type
Description: Method to coat large-area solar cell module
Format: Text string
Default: None
Examples: Bar coating; Slot die
2-6-2. gap (µm)
Description: gap between the bar and the substrate
Format: Number
Default: None
Examples:
2-6-3. coating speed (mm/s)
Description: Moving speed of the bar during the coating
Format: Number
Default: None
Examples:
2-6-4. feeding amount (µl)
Description: Amount of the solution loaded for the coating
Format: Number
Default: None
Examples:
2-7. Thermal evaporation : for blocking layer or buffer layer
2-7-1. vacuum evaporation-thickness (nm)
Description: Thickness of the blocking thin film after thermal evaporation
Format: Number
Default: None
Examples: 35; 30
2-7-2. Evaporation rate (Å/s)
Description: (average) Evaporation rate (It can be calculated by dividing the thickness of a thin film by the duration time of the process.)
Format: Number
Default: None
Examples: 0.1; 0.3
2-7-3. Vacuum pressure (uTorr)
Description: Pressure in a processing chamber during thermal evaporation
Format: Number
Default: None
Examples: 1; 2; 0.97
3. Surface Treatment1
Description: surface treatment between Blocking layer and ETL (charge transfer layer)
Format: Text string
Default: None
Examples: air_exposure; UV-ozone; Plasma
4. ETL
4-1. Material : for ETL
4-1-1. Material
Description: Material used for ETL
Format: Text string
Default: None
Examples: C60; SnO2; PCBM; TiO2
4-1-2. Concentration
Description: Concentration of material used for ETL
Format: Number
Default: None
Examples: 3;5
4-1-3. Concentration Unit
Description: Unit of concentration of material used
Format: Text string
Default: None
Examples: mg/ml
4-1-4. Quantity (ml)
Description: Quantity of material used (unit: ml)
Format: Number
Default: None
Examples: 0.2; 0.5
4-2. Solvent : (multiple solvents possible) : for ETL
4-2-1. Material
Description: Solvent used for ETL
Format: Text string
Default: None
Examples: DMF; DMSO
4-2-2. Volume (ml)
Description: Amount of solvent used (unit: ml)
Format: Number
Default: None
Examples: 0.2; 0.5
4-3. Spin coating : for ETL
4-3-1. Type
Description: method of spin coating for ETL
Format: Text string
Default: None
Examples: drop&run; dynamic
4-3-2. RPM
Description: RPM value of spin coater
Format: Number
Default: None
Examples: 2000; 5000
4-3-3. Time(s)
Description: operating time (unit: sec) of spin coater
Format: Number
Default: None
Examples: 20; 50
4-4. Vacuum suction time(s) : for ETL
Description: vacuum suction time (unit: sec) after spin coating
Format: Number
Default: None
Examples:
4-5. Annealing : for ETL
4-5-1. Temperature (ºC)
Description: Annealing Temperature (unit: ºC)
Format: Number
Default: None
Examples: 180
4-5-2. Time(min)
Description: Annealing time (unit: min)
Format: Number
Default: None
Examples: 30; 50
4-6. ETL doping
4-6-1. Material
Description: material for ETL doping
Format: Text string
Default: None
Examples:
4-6-2. Volume (ul)
Description: Amount of material used (unit: ul) for ETL doping
Format: Number
Default: None
Examples:
4-7. Module : for ETL
4-7-1. Type
Description: Method to coat large-area solar cell module
Format: Text string
Default: None
Examples: Bar coating; Slot die
4-7-2. gap (µm)
Description: gap between the bar and the substrate
Format: Number
Default: None
Examples:
4-7-3. coating speed (mm/s)
Description: Moving speed of the bar during the coating
Format: Number
Default: None
Examples:
4-7-4. feeding amount (µl)
Description: Amount of the solution loaded for the coating
Format: Number
Default: None
Examples:
4-8. Thermal evaporation: for ETL
4-8-1. vacuum evaporation-thickness (nm)
Description: Thickness of the thin film after thermal evaporation
Format: Number
Default: None
Examples: 35; 30
4-8-2. Evaporation rate (Å/s)
Description: (average) Evaporation rate (It can be calculated by dividing the thickness of a thin film by the duration time of the process.)
Format: Number
Default: None
Examples: 0.1; 0.3
4-8-3. Vacuum pressure (uTorr)
Description: Pressure in a processing chamber during thermal evaporation
Format: Number
Default: None
Examples: 1; 2; 0.97
4-9. Chemical Bath Deposition: for ETL
4-9-1. Solution
Description: Solution used for Chemical Bath Deposition
Format: Text string
Default: None
Examples: SnCl22H2O; thioglycolic acid; DI water; HCl; Urea
4-9-2. Quantity (ml)
Description: Amount of solution used (unit: ml)
Format: Number
Default: None
Examples: 10
4-9-3. Bath annealing Temperature (ºC)
Description: Chemical Bath annealing Temperature (unit: ºC) for ETL
Format: Number
Default: None
Examples: 90
4-9-4. Bath annealing Time(hr)
Description: Chemical Bath annealing time (unit: hr) for ETL
Format: Number
Default: None
Examples: 30; 50
4-10. Sputtering : for ETL
4-10-1. Target material
Description: Sputtering target material for ETL
Format: Text string
Default: None
Examples: SnO2; TiO2
4-10-2. Base pressure (uTorr)
Description: Pressure of the sputtering chamber before the process
Format: Number
Default: None
Examples: 1
4-10-3. Working pressure (mTorr)
Description: Pressure of the sputtering chamber during the process
Format: Number
Default: None
Examples: 1
4-10-4. Ar/O2 ratio
Description: Ratio of Ar and O during the sputtering process
Format: Number
Default: None
Examples:
4-10-5. Deposition rate (Å/s)
Description: (average) Deposition rate (It can be calculated by dividing the thickness of a thin film by the duration time of the process.)
Format: Number
Default: None
Examples: 1
4-10-6. Deposition thickness (nm)
Description: Thickness of the solar cell film after sputtering process
Format: Number
Default: None
Examples:
4-10-7. RF power (W)
Description: RF power that allows the plasma to hit the target
Format: Number
Default: None
Examples: 10
4-10-8. DC power current (mA)
Description: DC current (unit: mA) that allows the plasma to hit the target
Format: Number
Default: None
Examples: 10
4-10-9. DC power voltage (V)
Description: DC voltage (unit: V) that allows the plasma to hit the target
Format: Number
Default: None
Examples: 1
5. ETL Treatment
5-1. Material : for ETL Treatment
5-1-1. Material
Description: Material used for ETL Treatment
Format: Text string
Default: None
Examples: KCl; MACl
5-1-2. Concentration
Description: Concentration of material used for ETL Treatment
Format: Number
Default: None
Examples:
5-1-3. Concentration Unit
Description: Unit of concentration of material used for ETL Treatment
Format: Text string
Default: None
Examples: mg/ml
5-1-4. Quantity (ml)
Description: Quantity of material used (unit: ml) for ETL Treatment
Format: Number
Default: None
Examples: 0.2; 0.5
5-2. Solvent : (multiple solvent blocks possible) : for ETL Treatment
5-2-1. Material
Description: Solvent used for ETL Treatment
Format: Text string
Default: None
Examples: DMF; DMSO
5-2-2. Volume (ml)
Description: Amount of solvent used (unit: ml) for ETL Treatment
Format: Number
Default: None
Examples: 0.2; 0.5
5-3. Spin coating : for ETL Treatment
5-3-1. Type
Description: method of spin coating for ETL Treatment
Format: Text string
Default: None
Examples: drop&run; dynamic
5-3-2. RPM
Description: RPM value of spin coater
Format: Number
Default: None
Examples: 2000; 5000
5-3-3. Time(s)
Description: operating time (unit: sec) of spin coater
Format: Number
Default: None
Examples: 20; 50
5-4. Vacuum suction time(s) : for ETL Treatment
Description: vacuum suction time (unit: sec) after spin coating
Format: Number
Default: None
Examples:
5-5. Annealing : for ETL Treatment
5-5-1. . Temperature (ºC)
Description: Annealing Temperature (unit:℃) for ETL Treatment
Format: Number
Default: None
Examples: 180
5-5-2. Time(min)
Description: Annealing time (unit: min) for ETL Treatment
Format: Number
Default: None
Examples: 30; 50
5-6. Module : for ETL Treatment
5-6-1. Type
Description: Method to coat large-area solar cell module
Format: Text string
Default: None
Examples: Bar coating; Slot die
5-6-2. gap (µm)
Description: gap between the bar and the substrate
Format: Number
Default: None
Examples:
5-6-3. coating speed (mm/s)
Description: Moving speed of the bar during the coating
Format: Number
Default: None
Examples:
5-6-4. feeding amount (µl)
Description: Amount of the solution loaded for the coating
Format: Number
Default: None
Examples:
5-7. Thermal evaporation : for ETL Treatment
5-7-1. vacuum evaporation-thickness (nm)
Description: Thickness of the thin film after thermal evaporation
Format: Number
Default: None
Examples: 35; 30
5-7-2. Evaporation rate (Å/s)
Description: (average) Evaporation rate (It can be calculated by dividing the thickness of a thin film by the duration time of the process.)
Format: Number
Default: None
Examples: 0.1; 0.3
5-7-3. Vacuum pressure (uTorr)
Description: Pressure in a processing chamber during thermal evaporation
Format: Number
Default: None
Examples: 1; 2; 0.97
6. Surface Treatment2
Description: surface treatment between ETL (charge transfer layer) and Perovskite
Format: Text string
Default: None
Examples: air_exposure; UV-ozone; Plasma
7. Perovskite
: multiple columns possible depending on the number of steps
7-1. Method
Description: method to build a perovskite layer (number of step)
Format: Text string
Default: None
Examples: 1-step; 2-step
7-2. Molarity
Description: Molarity (molar concentration) of perovskite solution (unit: mol/L, M)
Format: Number
Default: None
Examples: 1.5; 1.8;
7-3. A-site : multiple blocks possible
7-3-1. Material : for A site
Description: Material for A-site
Format: Text string
Default: None
Examples: FA; MA; Cs
7-3-2. Ratio (%)
Description: Ratio of materials that make up A-site (unit: %)
Format: Number
Default: The sum of the ratios of multiple blocks should add up to 100.
Examples: 95; 5
7-4. B-site : multiple blocks possible
7-4-1. Material : for B site
Description: Material for B-site
Format: Text string
Default: None
Examples: Pb; Sn
7-4-2. Ratio (%)
Description: Ratio of materials that make up B-site (unit: %)
Format: Number
Default: The sum of the ratios of multiple blocks should add up to 100
Examples: 99; 1
7-5. X-site : multiple blocks possible
7-5-1. Material : for X site
Description: Material for X-site
Format: Text string
Default: None
Examples: I; Br
7-5-2. Ratio (%)
Description: Ratio of materials that make up X-site (unit: %)
Format: Number
Default: The sum of the ratios of multiple blocks should add up to 100.
Examples: 95; 5
7-6. Solvent : for Perovskite (multiple blocks possible)
7-6-1. Material
Description: Solvent used for Perovskite
Format: Text string
Default: None
Examples: DMF; DMSO
7-6-2. Volume (ml)
Description: Amount of solvent used (unit: ml)
Format: Number
Default: None
Examples: 0.2; 0.5
7-7. Additive : for Perovskite (multiple blocks possible)
7-7-1. Material
Description: Material used for Additive of Perovskite
Format: Text string
Default: None
Examples: MACl
7-7-2. Solvent
Description: Solvent for Additive of Perovskite
Format: Text string
Default: None
Examples:
7-7-3. Concentration
Description: Concentration of Solvent for Additive of Perovskite
Format: Number
Default: None
Examples: 1
7-7-4. Concentration Unit
Description: Unit of concentration of Solvent for Additive of Perovskite
Format: Number
Format: Text string
Default: None
Examples: mg/ml
7-7-5. Quantity (mol%)
Description: Quantity of additive solvent used (unit: mol%)
Format: Number
Default: None
Examples: 20
7-8. Stirring Time (min)
Description: Stirring Time for dissolving solutes in solvents (unit: min)
Format: Number
Default: None
Examples: 120
7-9. Antisolvent : for Perovskite
7-9-1. Material
Description: Antisolvent used for Perovskite
Format: Text string
Default: None
Examples: CB
7-9-2. Quantity (µl)
Description: Amount of Antisolvent used (unit: µl)
Format: Number
Default: None
Examples: 300
7-9-3. Dripping time (s)
Description: Dripping time of Antisolvent (unit: sec)
Format: Number
Default: None
Examples: 20
7-10. Spin coating : for Perovskite
7-10-1. Type
Description: method of spin coating
Format: Text string
Default: None
Examples: drop&run; dynamic
7-10-2. RPM
Description: RPM value of spin coater
Format: Number
Default: None
Examples: 2000; 5000
7-10-3. Time(s)
Description: operating time (unit: sec) of spin coater
Format: Number
Default: None
Examples: 20; 50
7-11. Annealing : for Perovskite
7-11-1. Temperature (ºC)
Description: Annealing Temperature (unit : ºC)
Format: Number
Default: None
Examples: 100
7-11-3. Time(min)
Description: operating time (unit: min) of Annealing
Format: Number
Default: None
Examples: 60
7-12. Atmosphere
7-12-1. Type
Description: type of atmosphere (N2 or air) used during the deposition of a perovskite layer
Format: Text string
Default: None
Examples: N2
7-12-1. Temperature (ºC)
Description: Temperature during the deposition of a perovskite layer (unit: ºC)
Format: Number
Default: None
Examples: 18.6
7-12-3. Humidity (RH%)
Description: Humidity during the deposition of a perovskite layer (unit: RH%)
Format: Number
Default: None
Examples:
7-13. Assist : for Perovskite
7-13-1. Type
Description: A method of promoting perovskite crystallization by using a hot air gun to heat blow during spin coating process
Format: Text string
Default: None
Examples: hot air assist
7-13-2. Temperature (ºC)
Description: Temperature of hot air gun (unit: ºC)
Format: Number
Default: None
Examples: 200
7-13-3. Assist start time (s)
Description: Time of start the heat flow using hot air gun (unit: sec)
Format: Number
Default: None
Examples: 13
7-13-4. Total assist time (s)
Description: Total time of heat flow using hot air gun (unit: sec)
Format: Number
Default: None
Examples: 10
7-14. Module : for Perovskite
7-14-1. Type
Description: Method to coat large-area solar cell module
Format: Text string
Default: None
Examples: Bar coating; Slot die
7-14-2. gap (µm)
Description: gap between the bar and the substrate
Format: Number
Default: None
Examples:
7-14-3. coating speed (mm/s)
Description: Moving speed of the bar during the coating
Format: Number
Default: None
Examples:
7-14-4. feeding amount (µl)
Description: Amount of the solution loaded for the coating
Format: Number
Default: None
Examples:
7-15. Thermal evaporation : for Perovskite
7-15-1. vacuum evaporation-thickness (nm)
Description: Thickness of the thin film after thermal evaporation
Format: Number
Default: None
Examples: 35; 30
7-15-2. Evaporation rate (Å/s)
Description: (average) Evaporation rate (It can be calculated by dividing the thickness of a thin film by the duration time of the process.)
Format: Number
Default: None
Examples: 0.1; 0.3
7-15-3. Vacuum pressure (uTorr)
Description: Pressure in a processing chamber during thermal evaporation
Format: Number
Default: None
Examples: 1; 2; 0.97
8. Perovskite Treatment
8-1. Material : for Perovskite Treatment
8-1-1. Material
Description: Material used for Perovskite Treatment
Format: Text string
Default: None
Examples: PEAl, MACl
8-1-2. Concentration
Description: Concentration of material used for Perovskite Treatment
Format: Number
Default: None
Examples:3
8-1-3. Concentration Unit
Description: Unit of concentration of material used
Format: Text string
Default: None
Examples: mg/ml
8-1-4. Quantity (ml)
Description: Quantity of material used (unit: ml)
Format: Number
Default: None
Examples: 0.2
8-2. Solvent : for Perovskite Treatment (multiple blocks possible)
8-2-1. Material
Description: Solvent used for Perovskite Treatment
Format: Text string
Default: None
Examples: DMSO
8-2-2. Volume (ml)
Description: Amount of solvent used (unit: ml)
Format: Number
Default: None
Examples: 0.2; 0.5
8-3. Spin coating : for Perovskite Treatment
8-3-1. Type
Description: method of spin coating for Perovskite Treatment
Format: Text string
Default: None
Examples: drop&run; dynamic
8-3-2. RPM
Description: RPM value of spin coater
Format: Number
Default: None
Examples: 2000; 5000
8-3-3. Time(s)
Description: operating time (unit: sec) of spin coater
Format: Number
Default: None
Examples: 20; 50
8-4. Vacuum suction time(s) : for Perovskite Treatment
Description: vacuum suction time (unit: sec) after spin coating
Format: Number
Default: None
Examples:
8-5. Annealing : for Perovskite Treatment
8-5-1. Temperature (ºC)
Description: Annealing Temperature (unit:ºC) for Perovskite Treatment
Format: Number
Default: None
Examples:
8-5-2. Time(min)
Description: Annealing time (unit: min) for Perovskite Treatment
Format: Number
Default: None
Examples:
8-6. Module : for Perovskite Treatment
8-6-1. Type
Description: Method to coat large-area solar cell module
Format: Text string
Default: None
Examples: Bar coating; Slot die
8-6-2. gap (µm)
Description: gap between the bar and the substrate
Format: Number
Default: None
Examples:
8-6-3. coating speed (mm/s)
Description: Moving speed of the bar during the coating
Format: Number
Default: None
Examples:
8-6-4. feeding amount (µl)
Description: Amount of the solution loaded for the coating
Format: Number
Default: None
Examples:
8-7. Thermal evaporation : for Perovskite Treatment
8-7-1. vacuum evaporation-thickness (nm)
Description: Thickness of the thin film after thermal evaporation
Format: Number
Default: None
Examples: 35; 30
8-7-2. Evaporation rate (Å/s)
Description: (average) Evaporation rate (It can be calculated by dividing the thickness of a thin film by the duration time of the process.)
Format: Number
Default: None
Examples: 0.1; 0.3
8-7-3. Vacuum pressure (uTorr)
Description: Pressure in a processing chamber during thermal evaporation
Format: Number
Default: None
Examples: 1; 2; 0.97
9. HTL
9-1. Material : for HTL
9-1-1. Material
Description: Material used for HTL
Format: Text string
Default: None
Examples: PTAA; spiro-OMeTAD; me-4pacz
9-1-2. Concentration
Description: Concentration of material used for HTL
Format: Number
Default: None
Examples: 3;5
9-1-3. Concentration Unit
Description: Unit of concentration of material used for HTL
Format: Text string
Default: None
Examples: mg/ml
9-1-4. Quantity (ml)
Description: Quantity of material used (unit: ml) for HTL
Format: Number
Default: None
Examples: 0.2; 0.5
9-2. Solvent : multiple blocks possible : for HTL
9-2-1. Material
Description: Solvent used for HTL
Format: Text string
Default: None
Examples: DMF; DMSO
9-2-2. Volume (ml)
Description: Amount of solvent used (unit: ml)
Format: Number
Default: None
Examples: 0.2; 0.5
9-3. Spin coating : for HTL
9-3-1. Type
Description: method of spin coating for HTL
Format: Text string
Default: None
Examples: drop&run; dynamic
9-3-2. RPM
Description: RPM value of spin coater
Format: Number
Default: None
Examples: 2000; 5000
9-3-3. Time(s)
Description: operating time (unit: sec) of spin coater
Format: Number
Default: None
Examples: 20; 50
9-4. Vacuum suction time(s) : for HTL
Description: vacuum suction time (unit: sec) after spin coating
Format: Number
Default: None
Examples:
9-5. Annealing : for HTL
9-5-1. Temperature (ºC)
Description: Annealing Temperature (unit: ºC) for HTL
Format: Number
Default: None
Examples: 180
9-5-2. Time(min)
Description: Annealing time (unit: min) for HTL
Format: Number
Default: None
Examples: 30; 50
9-6. HTL doping
9-6-1. Material
Description: material for HTL doping
Format: Text string
Default: None
Examples:
9-6-2. Volume (ul)
Description: Amount of material used for HTL doping (unit: ul)
Format: Number
Default: None
Examples: tBP; Li-TFSI
9-7. Module : for HTL
9-7-1. Type
Description: Method to coat large-area solar cell module
Format: Text string
Default: None
Examples: Bar coating; Slot die
9-7-2. gap (µm)
Description: gap between the bar and the substrate
Format: Number
Default: None
Examples:
9-7-3. coating speed (mm/s)
Description: Moving speed of the bar during the coating
Format: Number
Default: None
Examples:
9-7-4. feeding amount (µl)
Description: Amount of the solution loaded for the coating
Format: Number
Default: None
Examples:
9-8. Thermal evaporation : for HTL
9-8-1. vacuum evaporation-thickness (nm)
Description: Thickness of the thin film after thermal evaporation
Format: Number
Default: None
Examples: 35; 30
9-8-2. Evaporation rate (Å/s)
Description: (average) Evaporation rate (It can be calculated by dividing the thickness of a thin film by the duration time of the process.)
Format: Number
Default: None
Examples: 0.1; 0.3
9-8-3. Vacuum pressure (uTorr)
Description: Pressure in a processing chamber during thermal evaporation
Format: Number
Default: None
Examples: 1; 2; 0.97
10. HTL Treatment
10-1. Material : for HTL Treatment
10-1-1. Material
Description: Material used for HTL Treatment
Format: Text string
Default: None
Examples: Li-TFSI; BCP
10-1-2. Concentration
Description: Concentration of material used for HTL Treatment
Format: Number
Default: None
Examples:
10-1-3. Concentration Unit
Description: Unit of concentration of material used
Format: Text string
Default: None
Examples: mg/ml
10-1-4. Quantity (ml)
Description: Quantity of material used (unit: ml)
Format: Number
Default: None
Examples: 0.2; 0.5
10-2. Solvent : multiple blocks possible: for HTL Treatment
10-2-1. Material
Description: Solvent used for HTL Treatment
Format: Text string
Default: None
Examples: DMF; DMSO
10-2-2. Volume (ml)
Description: Amount of solvent used (unit: ml) for HTL Treatment
Format: Number
Default: None
Examples: 0.2; 0.5
10-3. Spin coating : for HTL Treatment
10-3-1. Type
Description: method of spin coating for HTL Treatment
Format: Text string
Default: None
Examples: drop&run; dynamic
10-3-2. RPM
Description: RPM value of spin coater
Format: Number
Default: None
Examples: 2000; 5000
10-3-3. Time(s)
Description: operating time (unit: sec) of spin coater
Format: Number
Default: None
Examples: 20; 50
10-4. Vacuum suction time(s) : for HTL Treatment
Description: vacuum suction time (unit: sec) after spin coating
Format: Number
Default: None
Examples:
10-5. Annealing : for HTL Treatment
10-5-1. Temperature (ºC)
Description: Annealing Temperature (unit:℃) for HTL Treatment
Format: Number
Default: None
Examples: 180
10-5-2. Time(min)
Description: Annealing time (unit: min) for HTL Treatment
Format: Number
Default: None
Examples: 30; 50
10-6. Module : for HTL Treatment
10-6-1. Type
Description: Method to coat large-area solar cell module
Format: Text string
Default: None
Examples: Bar coating; Slot die
10-6-2. gap (µm)
Description: gap between the bar and the substrate
Format: Number
Default: None
Examples:
10-6-3. coating speed (mm/s)
Description: Moving speed of the bar during the coating
Format: Number
Default: None
Examples:
10-6-4. feeding amount (µl)
Description: Amount of the solution loaded for the coating
Format: Number
Default: None
Examples:
10-7. Thermal evaporation : for HTL Treatment
10-7-1. vacuum evaporation-thickness (nm)
Description: Thickness of the thin film after thermal evaporation
Format: Number
Default: None
Examples: 35; 30
10-7-2. Evaporation rate (Å/s)
Description: (average) Evaporation rate (It can be calculated by dividing the thickness of a thin film by the duration time of the process.)
Format: Number
Default: None
Examples: 0.1; 0.3
10-7-3. Vacuum pressure (uTorr)
Description: Pressure in a processing chamber during thermal evaporation
Format: Number
Default: None
Examples: 1; 2; 0.97
11. Anode metal
11-1. Anode Metal : Material for Anode
Description: Material’s name used for Anode
Format: Text string
Default: None
Examples: Ag; Au
12. Miscellaneous
12-1 Note
Description: notes for the sample
Format: Text string
Default: None
Examples
12-2. AR
Description: Anti-Reflection coating (off:0, on:1)
Format: Number
Default:0
Examples: 0; 1
12-3. Type
Description: solar cell type, such as unit_cell or module
Format: Text string
Default: None
Examples: unit_cell; module
12-4. Device Type
Description: device type, such as p-i-n or n-i-p
Format: Text string
Default: None
Examples: p-i-n; n-i-p
12-5. Temperature (ºC)
Description: Temperature of device fabrication environment (unit: ºC)
Format: Number
Default: None
Examples:
12-6. Humidity (%)
Description: Humidity of device fabrication environment (unit: %)
Format: Number
Default: None
Examples:
12-7. Cell Dimension (cm2)
Description: cell dimension (must be written if JV curve doesn’t have an information for cell dimension)
Format: Number
Default: None
Examples: 0.64
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